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IRF7341 +BOM

Robust SOIC packaged device for high-performance switching circuit

IRF7341 General Description

N-channel MOSFET,IRF7341 4.7A 55V

Key Features

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Application

SWITCHING

Specifications

Part Life Cycle Code Transferred Pin Count 8
Reach Compliance Code compliant ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE Avalanche Energy Rating (Eas) 140 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 5.1 A Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 JESD-609 Code e0
Moisture Sensitivity Level 1 Number of Elements 2
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W Pulsed Drain Current-Max (IDM) 42 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN LEAD Terminal Form GULL WING
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

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