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Dual N-channel 30V MOSFET Transistor
SOIC-8Manufacturer:
Mfr.Part #:
IRF7907PBF
Datasheet:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Avalanche Energy Rating (Eas):
15 mJ
EDA/CAD Models:
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With its cutting-edge features, such as a low on-resistance of 0.014 ohms, maximum drain-source voltage of 30V, and continuous drain current of 26A, the IRF7907PBF is engineered to deliver superior performance in various electronic applications. Its TO-220 package ensures efficient heat dissipation and easy mounting, while its wide junction temperature range and fast switching speed make it a reliable choice for demanding operating conditions. This power MOSFET transistor is the perfect solution for power electronics applications that demand high efficiency and reliability, from power supplies to motor control and automotive systems. Trust the IRF7907PBF to deliver exceptional performance and reliability in your electronic designs
Source Content uid | IRF7907PBF | Part Life Cycle Code | Obsolete |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 15 mJ | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 11 A |
Drain-source On Resistance-Max | 0.0118 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G8 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 2 |
Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 2 W | Pulsed Drain Current-Max (IDM) | 85 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Transistor Element Material | SILICON |
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