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IRF9140 +BOM

Magnatec IRF9140 P-channel MOSFET Transistor, 18 A, -100 V, 3-Pin TO-3

IRF9140 General Description

MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:-18A; Current Temperature:25°C; Device Marking:IRF9140; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:76A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

Key Features

  • Single pulse avalanche energy rated
  • SOA is power-dissipation limited
  • Nanosecond switching speeds
  • Linear transfer characteristics
  • High input impedance

Specifications

Pbfree Code No Part Life Cycle Code Transferred
Pin Count 2 Reach Compliance Code compliant
ECCN Code EAR99 Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.23 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA JESD-30 Code O-MBFM-P2
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form PIN/PEG Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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