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IRF9241 +BOM

11A, 150V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

IRF9241 General Description

FEATURES• Low RDS(on)• Improved inductive ruggedness• Fsat switching times• Rugged polysilicon gate cell structure• Low input capacitance• Extended safe operating area• Improved high temperature reliability

Specifications

Source Content uid IRF9241 Part Life Cycle Code Obsolete
Reach Compliance Code not_compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Avalanche Energy Rating (Eas) 790 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.5 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA JESD-30 Code O-MBFM-P2
JESD-609 Code e0 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 125 W Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 44 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form PIN/PEG Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON
Turn-off Time-Max (toff) 134 ns Turn-on Time-Max (ton) 90 ns

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