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IRF9317PBF +BOM

P-Channel Silicon FET

IRF9317PBF General Description

P-Channel 30 V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO

Key Features

  • Features
  • Industry-Standard SO-8 Package
  • RoHS Compliant Containing no Lead, no Bromide and no Halogen
  • Resulting Benefits
  • Multi-Vendor Compatibility
  • Environmentally Friendlier

Specifications

Source Content uid IRF9317PBF Part Life Cycle Code Obsolete
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 330 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.0066 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 130 A Qualification Status Not Qualified
Surface Mount YES Terminal Form GULL WING
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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