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IRF9540NS +BOM

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Pbfree Code	No	Part Life Cycle Code	Transferred
Pin Count	3	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8541.29.00.95
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY	Avalanche Energy Rating (Eas)	430 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	23 A
Drain-source On Resistance-Max	0.117 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AB	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e0	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	225	Polarity/Channel Type	P-CHANNEL
Power Dissipation Ambient-Max	94 W	Power Dissipation-Max (Abs)	140 W
Pulsed Drain Current-Max (IDM)	76 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Polarity	P
Ptot max	3.8 W	RthJC max	1.1 K/W
VDS max	-100.0 V	VGS max	20.0 V
Mounting	SMD	Tj max	150.0 °C
RDS (on) max	117.0 mΩ	VGS(th) max	-4.0 V
VGS(th) min	-2.0 V	ID max	-23.0 A