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See Technical Specifications

IRF9Z24NS +BOM

1-Element Power FET, 55V, 12A, 0.175ohm

Manufacturer:

INFINEON
Mfr.Part #:

IRF9Z24NS
Datasheet:

IRF9Z24NS Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY
EDA/CAD Models:

Request Free CAD Models for IRF9Z24NS

IRF9Z24NS General Description

Housed in a TO-263 package, the IRF9Z24NS offers exceptional thermal performance and is easy to mount on a PCB. Its high-speed switching capability, featuring a gate charge of 18nC and a gate threshold voltage of 2V, makes it a versatile option for applications requiring fast response times. Furthermore, the built-in body diode provides reverse current protection and enables efficient freewheeling in inductive switching scenarios

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)	96 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	55 V
Drain Current-Max (ID)	12 A	Drain-source On Resistance-Max	0.175 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e0	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	225	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	48 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON