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See Technical Specifications

IRFB3206PBF +BOM

N-Channel 60 V 120A (Tc) 300W (Tc) Through Hole TO-220AB

Manufacturer:

INFINEON
Mfr.Part #:

IRFB3206PBF
Datasheet:

IRFB3206PBF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for IRFB3206PBF

IRFB3206PBF General Description

The IRFB3206PBF power MOSFET is a high-power device engineered to deliver superior performance in various applications. With a voltage rating of 60V and a continuous drain current of 120A, it is well-equipped to meet the demands of industrial and automotive environments, where reliable operation is crucial. Its low on-resistance of 0.0035 ohms ensures minimal power loss and high efficiency in power switching applications, making it an excellent choice for power supplies, motor control, high-current switching circuits, and automotive systems. The TO-220AB package allows for easy mounting on a heatsink for effective thermal management, while its capability to operate at high frequencies makes it suitable for applications requiring fast switching speeds. Furthermore, the MOSFET features a low gate charge and capacitance, enabling easy and efficient control of the device

Key Features

Reliable Thermal Performance
Ruggedized Power Handling
Safe Operating Characteristic
Efficient Energy Transfer

Application

Control motors with ease
Manage battery power
Perfect for electric cars

Specifications

Source Content uid	IRFB3206PBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	170 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	120 A
Drain-source On Resistance-Max	0.003 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	250
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	300 W
Pulsed Drain Current-Max (IDM)	840 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON