This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRFB3306PBF +BOM

Transistor MOSFET N-Channel Silicon 60V 160A TO-220AB Tube

Manufacturer:

INFINEON
Mfr.Part #:

IRFB3306PBF
Datasheet:

IRFB3306PBF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Models:

Request Free CAD Models for IRFB3306PBF

IRFB3306PBF General Description

Featuring a high input capacitance of 6110 picofarads, the IRFB3306PBF is well-suited for high-speed switching applications, allowing for rapid switching operations without sacrificing performance. Its TO-220AB package design not only provides easy installation but also enhances the MOSFET's thermal capabilities, allowing it to withstand high power levels without compromising its operational integrity

Application

SWITCHING

Specifications

Source Content uid	IRFB3306PBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	53 Weeks, 1 Day	Avalanche Energy Rating (Eas)	184 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	160 A
Drain-source On Resistance-Max	0.0042 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	230 W	Pulsed Drain Current-Max (IDM)	620 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON