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IRFM260 +BOM

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

IRFM260 General Description

In conclusion, the IRFM260 power MOSFET stands out for its superior performance, reliability, and versatility in various applications. Its robust design and advanced features make it a top choice for engineers and developers seeking high-power solutions that deliver optimal performance and efficiency

Key Features

  • Simple Drive Requirements
  • Ease of Paralleling
  • Hermetically Sealed
  • Electrically Isolated
  • Dynamic dv/dt Rating
  • Light-weight

Specifications

Pbfree Code No Part Life Cycle Code Transferred
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 700 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 35 A Drain-source On Resistance-Max 0.068 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-254AA
JESD-30 Code S-XSFM-P3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form PIN/PEG Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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