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IRFP3306PBF +BOM

Power MOSFET with 60V voltage rating

IRFP3306PBF General Description

The IRFP3306PBF Power Field-Effect Transistor is a high-performance semiconductor device suitable for a variety of power electronics applications. With its N-Channel configuration and metal-oxide semiconductor construction, this transistor offers low on-resistance and high current handling capacity, making it a popular choice for demanding applications. The TO-247AC package ensures easy installation and heat dissipation, while the lead-free and plastic packaging makes it environmentally friendly. Whether used in motor control, power supplies, or industrial equipment, the IRFP3306PBF provides reliable and efficient performance

Key Features

  • 11A, 400V
  • rDS(ON) = 0.550Ω
  • Single Pulse Avalanche Energy Rated
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Related Literature
  • - TB334 “Guidelines for Soldering Surface Mount
  • Components to PC Boards”

Specifications

Source Content uid IRFP3306PBF Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Application SWITCHING
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Element Material SILICON

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