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IRFP4110PBF +BOM

High-current FET with Low On-resistance of 0.0045 ohm

Manufacturer:

Infineon
Mfr.Part #:

IRFP4110PBF
Datasheet:

IRFP4110PBF Datasheet (PDF)
FunctionalPacking:

TUBE
AddProductInfo:

Trench Mosfet - TO-247
Msl:

NA
HalogenFree:

yes
EDA/CAD Models:

Request Free CAD Models for IRFP4110PBF

IRFP4110PBF General Description

The IRFP4110PBF MOSFET is a high-performance N-channel transistor with a TO-247AC case style, designed for use in a wide range of power applications. It offers a continuous drain current of 120A and a drain-source voltage of 100V, making it suitable for high-power circuits. The on-resistance is 3.7mohm at a test voltage of 20V, and the threshold voltage is typically 4V, providing efficient power handling capabilities. With a power dissipation of 370W, this MOSFET is capable of handling large amounts of power without overheating. It has three pins and uses through-hole termination, providing a secure and reliable connection. Additionally, the maximum drain current is 180A and the pulse current is 670A, making it suitable for applications requiring short bursts of high power. The IRFP4110PBF also offers impressive voltage ratings, with a typical drain-source voltage of 100V and a maximum gate-source voltage of 4V

Key Features

High voltage rating
Low leakage current
Easy to integrate
Fast turn-on speed

Application

Welding machine power
SMPS control circuits
Regulated power supplies

Specifications

functionalPacking	TUBE	addProductInfo	Trench Mosfet - TO-247
msl	NA	halogenFree	yes
customerInfo	STANDARD	fgr	ACH
productClassification	COM	productStatusInfo	active and preferred
hfgr	A	pbFree	yes
moistureProtPack	NON DRY	orderingCode	SP001556724
opn	IRFP4110PBF	completelyPbFree	no
sapMatnrSali	SP001556724