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See Technical Specifications

IRFR3711Z +BOM

Silicon Metal-oxide Semiconductor FET, 1-Element

Manufacturer:

INFINEON
Mfr.Part #:

IRFR3711Z
Datasheet:

IRFR3711Z Datasheet (PDF)
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

140 mJ
EDA/CAD Models:

Request Free CAD Models for IRFR3711Z

IRFR3711Z General Description

The IRFR3711Z is a powerful MOSFET designed for demanding power management applications, boasting a voltage rating of 20V and a continuous drain current rating of 57A. With its low on-state resistance of 5.3mΩ, this MOSFET facilitates efficient power conversion and minimizes power losses, making it an ideal choice for DC-DC converters, motor control, and load switching systems. Its fast switching speed and low gate charge further enhance its suitability for high-frequency and high-power operations

Application

High Frequency Synchronous Buck Converters for Computer Processor Power

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

Specifications

Part Life Cycle Code	Not Recommended	Reach Compliance Code	compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	140 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	30 A
Drain-source On Resistance-Max	0.0057 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	370 A
Surface Mount	YES	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON