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See Technical Specifications

IRFR48ZPBF +BOM

MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC

Manufacturer:

INFINEON
Mfr.Part #:

IRFR48ZPBF
Datasheet:

IRFR48ZPBF Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
EDA/CAD Models:

Request Free CAD Models for IRFR48ZPBF

IRFR48ZPBF General Description

Whether used in power supply units, motor control circuits, or automotive electronics, the IRFR48ZPBF delivers consistent and stable performance. With its advanced design and high-quality materials, this transistor is a dependable choice for demanding applications requiring efficient power management

Key Features

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

Specifications

Source Content uid	IRFR48ZPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	Avalanche Energy Rating (Eas)	74 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	55 V	Drain Current-Max (ID)	42 A
Drain-source On Resistance-Max	0.011 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	91 W	Pulsed Drain Current-Max (IDM)	250 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	55 V	Id - Continuous Drain Current	62 A
Rds On - Drain-Source Resistance	11 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	4 V	Qg - Gate Charge	40 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	91 W	Channel Mode	Enhancement
Fall Time	35 ns	Forward Transconductance - Min	120 S
Height	2.3 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	61 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	Automotive MOSFET
Typical Turn-Off Delay Time	40 ns	Typical Turn-On Delay Time	15 ns
Width	6.22 mm	Part # Aliases	SP001564992
Unit Weight	0.011640 oz