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IRFR9024NPBF +BOM

IRFR9024NPBF MOSFET: P-Channel, TO-252AA Package

IRFR9024NPBF General Description

The IRFR9024NPBF power MOSFET transistor stands out as a high-performance component with a wide range of applications. Its combination of high voltage rating, continuous drain current, and low on-state resistance makes it a valuable option for designing efficient power conversion systems. The TO-252 package ensures ease of integration into existing circuit designs, while the fast switching speed and high avalanche energy rating guarantee reliable performance under varying load conditions

Specifications

Source Content uid IRFR9024NPBF Part Life Cycle Code Obsolete
Reach Compliance Code not_compliant ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY Avalanche Energy Rating (Eas) 62 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.175 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 38 W
Pulsed Drain Current-Max (IDM) 44 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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