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IRFS4227PBF +BOM

Field-Effect Transistor with a Power Rating of 62 Amperes and a Drain-Source Voltage of 200 Volts, featuring a Drain-Source On-Resistance of 0

IRFS4227PBF General Description

N-Channel 200 V 62A (Tc) 330W (Tc) Surface Mount D2PAK

Key Features

  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain,
  • Energy Recovery and Pass Switch Applications
  • Low EPULSE Rating to Reduce Power
  • Dissipation in PDP Sustain, Energy Recovery

Specifications

Source Content uid IRFS4227PBF Part Life Cycle Code Obsolete
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 140 mJ Case Connection DRAIN
Configuration SINGLE DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 62 A Drain-source On Resistance-Max 0.026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 330 W Pulsed Drain Current-Max (IDM) 260 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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