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See Technical Specifications

IRFS4710 +BOM

Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

Manufacturer:

INFINEON
Mfr.Part #:

IRFS4710
Datasheet:

IRFS4710 Datasheet (PDF)
ECCN (US):

EAR99
HTS:

8542.32.00.36
Automotive:

No
PPAP:

No
EDA/CAD Models:

Request Free CAD Models for IRFS4710

IRFS4710 General Description

The IRFS4710 power MOSFET is a versatile component that delivers high performance in power management and conversion systems. With a robust drain-source voltage rating of 100V and a continuous drain current of 30A, this MOSFET is suitable for demanding applications where reliability and efficiency are crucial. Its low on-resistance of 9.5 mΩ ensures minimal power loss, enabling improved efficiency in high-current scenarios. Additionally, the IRFS4710 boasts a low gate charge of 44nC, facilitating rapid switching speeds and reducing switching losses

Application

High frequency DC-DC converters

Motor Control

Uninterrutible Power Supplies

Specifications

ECCN (US)	EAR99	Part Status	Active
HTS	8542.32.00.36	Automotive	No
PPAP	No	DRAM Type	DDR3L SDRAM
Chip Density (bit)	4G	Organization	256Mx16
Number of Internal Banks	8	Number of Words per Bank	32M
Number of Bits/Word (bit)	16	Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	1866	Maximum Access Time (ns)	0.195
Address Bus Width (bit)	18	Process Technology	CMOS
Minimum Operating Supply Voltage (V)	1.283	Maximum Operating Supply Voltage (V)	1.45
Operating Current (mA)	130	Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	95	Supplier Temperature Grade	Industrial
Number of I/O Lines (bit)	16	Packaging	Tape and Reel
Mounting	Surface Mount	PCB changed	96
Pin Count	96	Lead Shape	Ball