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See Technical Specifications

IRFU220N +BOM

N-channel silicon FET

Manufacturer:

INFINEON
Mfr.Part #:

IRFU220N
Datasheet:

IRFU220N Datasheet (PDF)
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

46 mJ
EDA/CAD Models:

Request Free CAD Models for IRFU220N

IRFU220N General Description

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Specifications

Part Life Cycle Code	Not Recommended	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	46 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	200 V	Drain Current-Max (ID)	5 A
Drain-source On Resistance-Max	0.6 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-251AA	JESD-30 Code	R-PSIP-T3
JESD-609 Code	e0	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	20 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	TIN LEAD	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON