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IRFU9024N +BOM

Silicon Metal-oxide Semiconductor FET with 55V and 0.175ohm

IRFU9024N General Description

When it comes to power MOSFETs, the IRFU9024N stands out as a top contender in the market. Its wide portfolio of devices caters to the diverse needs of designers across different industries, making it a go-to solution for various applications. From controlling DC motors to powering inverters and lighting systems, this MOSFET is a reliable choice that offers consistent performance and reliability. With its industry standard footprints and availability in different packages, integrating the IRFU9024N into your design is a hassle-free process that saves time and effort. Whether you're a seasoned engineer or a novice designer, this MOSFET is a valuable asset that will enhance the functionality and efficiency of your projects

Key Features

HIGH RELIABILITY

Application

SWITCHING

Specifications

Part Life Cycle Code Active Reach Compliance Code not_compliant
ECCN Code EAR99 Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 62 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 11 A Drain-source On Resistance-Max 0.175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3 JESD-609 Code e0
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Peak Reflow Temperature (Cel) 245 Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 44 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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