This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRFU9120NPBF +BOM

MOSFET transistor with P-Channel configuration, rated for -100V and -6.5A, featuring a low on-resistance of 480mOhm and total gate charge of 18nC

Manufacturer:

INFINEON
Mfr.Part #:

IRFU9120NPBF
Datasheet:

IRFU9120NPBF Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
EDA/CAD Models:

Request Free CAD Models for IRFU9120NPBF

IRFU9120NPBF General Description

Meet your power transistor needs with the efficient and dependable IRFU9120NPBF. This 1-Element P-Channel FET combines high-current and voltage capabilities with low on-resistance of 0.48ohm for optimal power handling performance. The Silicon metal-oxide semiconductor construction ensures stability and reliability in various industrial applications. Housed in a TO-251AA package, this FET offers easy installation and thermal management for seamless integration into your circuits. Choose the IRFU9120NPBF for a lead-free and sustainable power transistor solution that delivers consistent results

Specifications

Source Content uid	IRFU9120NPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	Avalanche Energy Rating (Eas)	100 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	6.6 A
Drain-source On Resistance-Max	0.48 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-251AA	JESD-30 Code	R-PSIP-T3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	39 W	Pulsed Drain Current-Max (IDM)	26 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON