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See Technical Specifications

IRFY9140 +BOM

Trans MOSFET P-CH 100V 15.8A 3-Pin(3+Tab) TO-257AA

Manufacturer:

INFINEON
Mfr.Part #:

IRFY9140
Datasheet:

IRFY9140 Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Transferred
Pin Count:

3
ECCN Code:

EAR99

IRFY9140 General Description

Discover the versatility and reliability of the IRFY9140 power field-effect transistor, engineered for high-power applications that demand precision and efficiency. With a maximum drain current of 15.8A and a voltage rating of 100V, this P-channel silicon MOSFET delivers exceptional performance with a low on-resistance of 0.2ohm. Housed in a TO-257AA hermetic sealed package, the IRFY9140 offers robust protection against moisture and contaminants, making it an ideal choice for rugged industrial environments. Trust the IRFY9140 to provide consistent and reliable power management for your critical electrical systems

Key Features

Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Glass Eyelets
For Space Level Applications Refer to Ceramic Version Part Numbers IRFY9140C, IRFY9140CM

Specifications

Pbfree Code	No	Part Life Cycle Code	Transferred
Pin Count	3	Reach Compliance Code
ECCN Code	EAR99	Additional Feature	HIGH RELIABILITY
Avalanche Energy Rating (Eas)	640 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	15.8 A	Drain-source On Resistance-Max	0.2 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-257AA
JESD-30 Code	S-XSFM-P3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	60 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Form	PIN/PEG
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	15.8 A	Rds On - Drain-Source Resistance	200 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	100 W
Channel Mode	Enhancement	Fall Time	65 ns
Height	16.89 mm	Length	10.66 mm
Product Type	MOSFET	Rise Time	85 ns
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	85 ns	Typical Turn-On Delay Time	35 ns
Width	5.08 mm	Unit Weight	0.011993 oz