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IRFZ48ZPBF +BOM

High-current N-Channel MOSFET Transistor from Infineon

Manufacturer:

INFINEON
Mfr.Part #:

IRFZ48ZPBF
Datasheet:

IRFZ48ZPBF Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

55 V
Current - Continuous Drain (Id) @ 25°C:

61A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRFZ48ZPBF

IRFZ48ZPBF General Description

The IRFZ48ZPBF is a high-power N-channel MOSFET transistor that offers exceptional performance in high-frequency switching applications. With a maximum drain-source voltage of 60V and a continuous drain current of 72A, it is well-equipped to handle the demands of high-power operations. Its low on-resistance of 17mOhm reduces power losses and improves efficiency, while the TO-220 package ensures reliable thermal performance and easy installation on a heatsink. The transistor's wide operating temperature range of -55°C to 175°C adds to its adaptability, making it suitable for use in various environments. Additionally, the IRFZ48ZPBF's gate-source voltage of +/-20V and gate charge of 52nC contribute to its fast switching speeds, further enhancing its suitability for power converters, motor controls, and amplifiers

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V	Current - Continuous Drain (Id) @ 25°C	61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	11mOhm @ 37A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1720 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	91W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole