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See Technical Specifications

IRG4PSC71K +BOM

85-Ampere Transistor for Industrial Use

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRG4PSC71K
Datasheet:

IRG4PSC71K Datasheet (PDF)
Packaging:

Bag
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

85 A
Current - Collector Pulsed (Icm):

200 A
EDA/CAD Models:

Request Free CAD Models for IRG4PSC71K

IRG4PSC71K General Description

The IRG4PSC71K is a top-of-the-line insulated gate bipolar transistor (IGBT) that stands out in the realm of high-power applications. Its impressive specifications include a current rating of 75A and a voltage rating of 600V, making it a versatile choice for a wide array of power electronic tasks. With a robust design that prioritizes low loss and rapid switching speeds, this IGBT ensures efficient power conversion with minimal energy wastage. This high-performance component also boasts a remarkable short-circuit withstand capability, making it ideal for industrial settings where reliability is paramount

Key Features

High frequency performance
Low voltage drop
Minimal external components required
Easy to use and integrate

Application

Reliable industrial equipment
Renewable energy converters
Precision induction heating

Specifications

Packaging	Bag	Part Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	600 V	Current - Collector (Ic) (Max)	85 A
Current - Collector Pulsed (Icm)	200 A	Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 60A
Power - Max	350 W	Switching Energy	790µJ (on), 1.98mJ (off)
Input Type	Standard	Gate Charge	340 nC
Td (on/off) @ 25°C	34ns/54ns	Test Condition	480V, 60A, 5Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole