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See Technical Specifications

IRLI2910PBF +BOM

1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer:

INFINEON
Mfr.Part #:

IRLI2910PBF
Datasheet:

IRLI2910PBF Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

31A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRLI2910PBF

IRLI2910PBF General Description

The IRLI2910PBF is a high-performance power MOSFET transistor from Infineon Technologies, designed for demanding high-speed switching applications in power supplies, motor control, and power management systems. With a 100V drain-source voltage rating, 42A continuous drain current, and low on-resistance of 30mΩ, this MOSFET delivers efficient power conversion with minimal conduction losses and fast switching times. Its advanced Power MOSFET technology ensures reliability and high performance, while the compact TO-220 package allows for easy mounting and effective heat sinking on circuit boards

Key Features

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V	Rds On (Max) @ Id, Vgs	26mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	140 nC @ 5 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	63W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole