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IRLML2402TRPBF +BOM

N-Channel, Silicon

IRLML2402TRPBF General Description

With a power dissipation of 540mW, the IRLML2402TRPBF is a robust and efficient transistor that meets the demands of modern electronics. Its exceptional performance characteristics make it a reliable choice for various circuit designs

Key Features

  • High current handling
  • Low thermal resistance
  • Compact footprint
  • Easy integration with other components

Application

  • Advanced power management
  • Precision motor control
  • Sleek LED driver design

Specifications

Source Content uid IRLML2402TRPBF Part Life Cycle Code End Of Life
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.2 A Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.54 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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