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IRLML6401PBF +BOM

INFINEON IRLML6401PBF is a MOSFET transistor designed for P-channel operation, capable of handling currents up to -4

IRLML6401PBF General Description

The IRLML6401PBF is a small signal MOSFET designed to excel in low power applications where efficiency is paramount. With its compact SOT-23 package and low on-resistance of 0.35 ohms, this device minimizes power dissipation and maximizes switching performance

Specifications

Source Content uid IRLML6401PBF Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Additional Feature HIGH RELIABILITY Avalanche Energy Rating (Eas) 33 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 4.3 A Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 125 pF
JEDEC-95 Code TO-236AB JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 34 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 460 ns
Turn-on Time-Max (ton) 43 ns

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