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IRLZ44NPbF +BOM
N-Channel 55 V 47A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-220AB
TO-220-
Manufacturer:
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Mfr.Part #:
IRLZ44NPbF
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Datasheet:
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Series:
HEXFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
55 V
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EDA/CAD Models:
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IRLZ44NPbF General Description
In conclusion, the IRLZ44NPBF is a versatile and high-quality MOSFET that combines superior performance with ease of use. Whether you need to drive high-power loads or require efficient switching capabilities, this MOSFET is sure to meet your requirements and deliver exceptional results. Trust the IRLZ44NPBF for your power management needs and experience the difference it can make in your applications
Key Features
- MOSFET with logic-level gate drive applied
- Low thermal resistance and high current density
- Pulse-width modulation and fault-tolerant operation supported
Application
- Sensor interfaces
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | HEXFET® |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V | Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
Vgs (Max) | ±16V | Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IRLZ44 |
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IRLZ44NPbF Datasheet PDF
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