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IRLZ44NPbF +BOM

N-Channel 55 V 47A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-220AB

IRLZ44NPbF General Description

In conclusion, the IRLZ44NPBF is a versatile and high-quality MOSFET that combines superior performance with ease of use. Whether you need to drive high-power loads or require efficient switching capabilities, this MOSFET is sure to meet your requirements and deliver exceptional results. Trust the IRLZ44NPBF for your power management needs and experience the difference it can make in your applications

Key Features

  • MOSFET with logic-level gate drive applied
  • Low thermal resistance and high current density
  • Pulse-width modulation and fault-tolerant operation supported

Application

  • Sensor interfaces

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series HEXFET®
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48 nC @ 5 V
Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
FET Feature - Power Dissipation (Max) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number IRLZ44

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Ratings and Reviews

More
B
B**n 02/11/2024

Saved, everything works.

3
C
C**n 09/30/2023

Well done. I do not know how fragile the material is, but the view is excellent. Made under the bossovsky, but a couple of millimeters more in diameter.

11
L
L**n 07/04/2023

GoodBut for a very short time

15
I
I**a 01/29/2021

To measure soil moisture is what you need. Before use, smeared dielectric lacquer on all contacts.

10

Reviews

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IRLZ44NPbF Datasheet PDF

Preliminary Specification IRLZ44NPbF PDF Download

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