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IXBF50N360 +BOM

IGBT 3600 V 70 A 290 W Through Hole ISOPLUS i4-PAC™

Manufacturer:

IXYS
Mfr.Part #:

IXBF50N360
Datasheet:

IXBF50N360 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Height:

21.34 mm
Length:

20.29 mm
EDA/CAD Models:

Request Free CAD Models for IXBF50N360

IXBF50N360 General Description

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Key Features

"Free" intrinsic body diode
High power density
High frequency operation
Low conduction losses
MOS gate turn on for drive simplicity
4000V electrical isolation
Advantages:
Low gate drive requirements
Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices)
Easy to mount

Application

Switched-mode and resonant-mode power supplies
Uninterruptible Power Supplies (UPS)
Laser and X-ray generators
Capacitor discharge circuits
High voltage pulser circuits
High voltage test equipment
AC switches

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Height	21.34 mm
Length	20.29 mm	Product Type	IGBT Transistors
Factory Pack Quantity	25	Subcategory	IGBTs
Tradename	BIMOSFET	Width	5.21 mm
Unit Weight	0.229281 oz