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See Technical Specifications

IXYA20N120C4HV +BOM

IGBT PT 1200 V 68 A 375 W Surface Mount TO-263HV

Manufacturer:

IXYS
Mfr.Part #:

IXYA20N120C4HV
Datasheet:

IXYA20N120C4HV Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for IXYA20N120C4HV

IXYA20N120C4HV General Description

The IXYA20N120C4HV IGBTs are engineered with square Reverse Bias Safe Operating Areas (RBSOA) and a 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. One of their key strengths lies in their positive collector-to-emitter voltage temperature coefficient, enabling designers to use multiple devices in parallel to meet high current requirements effectively. Additionally, these devices feature low gate charges, which not only reduce gate drive demands but also minimize switching losses, enhancing overall efficiency

Key Features

Prolonged operating temperature range
High surge immunity and fault tolerance

Application

Compact Design
Fast Welding Speeds
Stable Voltage Output

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	SMD/SMT	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.5 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	68 A
Pd - Power Dissipation	375 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	Trench
Continuous Collector Current Ic Max	120 A	Product Type	IGBT Transistors
Factory Pack Quantity	50	Subcategory	IGBTs
Tradename	XPT	Unit Weight	0.088185 oz