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IXYH55N120A4 +BOM

IGBT PT 1200 V 175 A 650 W Through Hole TO-247 (IXTH)

Manufacturer:

IXYS
Mfr.Part #:

IXYH55N120A4
Datasheet:

IXYH55N120A4 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for IXYH55N120A4

IXYH55N120A4 General Description

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.

Key Features

Low on-state voltages Vcesat
Positive thermal coefficient of Vcesat
International standard packages

Application

Battery chargers
Lamp ballasts
Power inverters
Uninterruptible power supplies (UPS)
Welding machines
Advantages:
Ideal for high power density and high inrush currents, low loss applications
Hard-switching capable
Easy paralleling of devices
Reduced gate driver requirements
Ease of replacement and availability of isolation package

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	1.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	175 A
Pd - Power Dissipation	650 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	Trench
Continuous Collector Current Ic Max	350 A	Gate-Emitter Leakage Current	100 nA
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Tradename	XPT