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IXYH55N120C4 +BOM

IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247

Manufacturer:

IXYS
Mfr.Part #:

IXYH55N120C4
Datasheet:

IXYH55N120C4 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for IXYH55N120C4

IXYH55N120C4 General Description

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.

Key Features

Low Vcesat, low Eon/Eoff
High surge current capability and short circuit capability
Positive thermal coefficient of Vcesat

Application

Battery Chargers
Lamp Ballast
Motor Drives
Power Inverters
Welding Machines
Advantages:
Hard-switching capabilities
High power densities
Temperature stability of diode forward voltage VF
Low gate drive requirements

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.5 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	140 A
Pd - Power Dissipation	650 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	1200V XPTTM Gen 10
Continuous Collector Current Ic Max	240 A	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Tradename	XPT