This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

IXYK110N120C4 +BOM

Ultra-fast switching, high-performance power conversi

  • Manufacturer:

    IXYS

  • Mfr.Part #:

    IXYK110N120C4

  • Datasheet:

    IXYK110N120C4 Datasheet (PDF) pdf-icon

  • Technology:

    Si

  • Mounting Style:

    Through Hole

  • Configuration:

    Single

  • Collector- Emitter Voltage VCEO Max:

    1.2 kV

IXYK110N120C4 General Description

The IXYK110N120C4 represents the pinnacle of power management technology. Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices offer exceptional performance and reliability. With features such as reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities, these IGBTs are well-equipped to meet the demands of a variety of applications. Their breakdown voltage range from 650V to 1200V makes them ideal for snubber-less hard-switching applications, offering a versatile solution for power management needs. Additionally, their positive collector-to-emitter voltage temperature coefficient and low gate charges further enhance their appeal, providing engineers with the flexibility and efficiency they need for their designs

Key Features

  • Rapid rise time, high voltage rating
  • Low Eon/Eoff, high surge current
  • Thermal shutdown, overcurrent limiting
  • Low input capacitance, high frequency operation

Application

  • Battery Chargers
  • Lamp Ballast
  • Motor Drives
  • Power Inverters
  • Welding Machines
  • Advantages:
  • Hard-switching capabilities
  • High power densities
  • Temperature stability of diode forward voltage VF
  • Low gate drive requirements

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.4 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 310 A
Pd - Power Dissipation 1.36 kW Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Series 1200V XPTTM Gen 8
Continuous Collector Current Ic Max 310 A Product Type IGBT Transistors
Factory Pack Quantity 25 Subcategory IGBTs
Tradename XPT

Service Policies and Others

After-Sales & Settlement Related

payment Payment

Payment Method

hsbc
TT/Wire Transfer
paypal
Paypal
wu
Western Union
mg
Money Gram

For alternative payment channels, please reach out to us at:

[email protected]
shipping Shipping & Packing

Shipping Method

fedex
Fedex
ups
UPS
dhl
DHL
tnt
NTN
Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

Reviews

You need to log in to reply. Sign In | Sign Up