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IXYT30N65C3H1HV +BOM

IGBT PT 650 V 60 A 270 W Surface Mount TO-268AA

IXYT30N65C3H1HV General Description

IGBT PT 650 V 60 A 270 W Surface Mount TO-268AA

Specifications

Product Category IGBT Transistors REACH Details
Technology Si Mounting Style Through Hole
Configuration Single Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 2.35 V Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 60 A Pd - Power Dissipation 270 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Series IXYT30N65C3 Continuous Collector Current Ic Max 60 A
Gate-Emitter Leakage Current 100 nA Moisture Sensitive Yes
Product Type IGBT Transistors Factory Pack Quantity 30
Subcategory IGBTs Tradename XPT
Unit Weight 0.141096 oz

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