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IXYX110N120B4 +BOM

Fast switching speed and low losses make it ideal for motor driv

Manufacturer:

IXYS
Mfr.Part #:

IXYX110N120B4
Datasheet:

IXYX110N120B4 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV

IXYX110N120B4 General Description

Our revolutionary IXYX110N120B4 product is the result of years of research and development, utilizing our exclusive XPT™ thin-wafer technology and cutting-edge Trench IGBT process. One of the key features of these devices is their exceptionally low thermal resistance, which translates to reduced energy losses and fast switching. In addition, these IGBTs boast a low tail current and high current densities, making them a top choice for a wide range of applications

Key Features

Low Vcesat, low Eon/Eoff
High surge current capability and short circuit protection
Positive thermal coefficient of Vcesat
Low electromagnetic interference

Application

Efficient power conversion
Reliable performance
Compact size

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.1 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	340 A
Pd - Power Dissipation	1.36 kW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	1200V XPTTM Gen 4
Continuous Collector Current Ic Max	340 A	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Tradename	XPT