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JAN2N2432 +BOM

JAN2N2432 offers superior performance in harsh environments with its robust construction

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Bipolar (BJT) Transistor NPN 30 V 100 mA 360 mW Through Hole TO-18 (TO-206AA)

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Case Connection	COLLECTOR	Collector Current-Max (IC)	0.1 A
Collector-Emitter Voltage-Max	30 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	80	JEDEC-95 Code	TO-206AA
JESD-30 Code	O-MBCY-W3	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	175 °C	Polarity/Channel Type	NPN
Qualification Status	Qualified	Reference Standard	MIL-19500/313F
Surface Mount	NO	Terminal Finish	TIN LEAD
Terminal Form	WIRE	Terminal Position	BOTTOM
Transistor Application	CHOPPER	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	20 MHz	Series	-
Transistor Type	NPN	Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	30 V	Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	10nA	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1mA, 5V
Power - Max	360 mW	Frequency - Transition	-
Operating Temperature	-65°C ~ 175°C (TJ)	Grade	Military
Qualification	MIL-PRF-19500/313	Mounting Type	Through Hole