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JAN2N2905A +BOM

Transistor JAN2N2905A is a PNP-type General Purpose Bipolar Junction Transistor (BJT) with a voltage rating of 60V, a maximum current of 0

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Bipolar (BJT) Transistor PNP 60 V 600 mA 800 mW Through Hole TO-39

Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	22 Weeks	Collector Current-Max (IC)	0.6 A
Collector-Emitter Voltage-Max	60 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	50	JEDEC-95 Code	TO-39
JESD-30 Code	O-MBCY-W3	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	200 °C	Operating Temperature-Min	-65 °C
Polarity/Channel Type	PNP	Power Dissipation-Max (Abs)	0.6 W
Qualification Status	Qualified	Reference Standard	MIL-19500/290
Surface Mount	NO	Terminal Finish	TIN LEAD
Terminal Form	WIRE	Terminal Position	BOTTOM
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	200 MHz
Series	-	Transistor Type	PNP
Current - Collector (Ic) (Max)	600 mA	Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Power - Max	800 mW
Frequency - Transition	-	Operating Temperature	-65°C ~ 200°C (TJ)
Grade	Military	Qualification	MIL-PRF-19500/290
Mounting Type	Through Hole	Base Product Number	2N2905