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JANS2N2222AUB +BOM

Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Surface Mount UB

Manufacturer:

MICROCHIP
Mfr.Part #:

JANS2N2222AUB
Datasheet:

JANS2N2222AUB Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

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JANS2N2222AUB General Description

Engineered to meet rigorous military standards for performance and reliability, the JANS2N2222AUB is an exceptional NPN bipolar junction transistor (BJT) designed for military and aerospace applications. Featuring a maximum collector current (Ic) of 800mA and a maximum power dissipation (Pd) of 500mW, this high-reliability transistor is well-equipped for a wide range of low-power switching and amplification tasks. Its DC current gain (hFE) of 100 minimum at 150mA ensures stable and consistent performance in various circuit configurations, making it a dependable choice for demanding applications. Housed in a hermetically sealed TO-18 metal can package, the JANS2N2222AUB offers enhanced durability in harsh environments and operates reliably over a wide temperature range from -65°C to 200°C, making it the perfect solution for extreme conditions

Specifications

Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	16 Weeks	Collector Current-Max (IC)	0.8 A
Collector-Emitter Voltage-Max	50 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	30	JESD-30 Code	R-CDSO-N3
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	200 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	0.5 W
Qualification Status	Qualified	Reference Standard	MIL-19500/255
Surface Mount	YES	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	250 MHz	Series	Military, MIL-PRF-19500/255
Transistor Type	NPN	Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	500 mW	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount