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JANTX2N2907A +BOM

Product JANTX2N2907A falls under the category of small-signal Bipolar Junction Transistors (BJTs)

Manufacturer:

Microchip
Mfr.Part #:

JANTX2N2907A
Datasheet:

JANTX2N2907A Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

60 V
EDA/CAD Models:

Request Free CAD Models for JANTX2N2907A

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JANTX2N2907A General Description

The JANTX2N2907A transistor is an essential component in critical applications where reliability and performance are crucial. Its robust design allows it to withstand harsh environments and high levels of radiation, making it a top choice for military, aerospace, and space applications. With a maximum collector current rating of 800 mA and a maximum voltage rating of 60 volts, this transistor delivers high performance in low-power switching and amplification tasks. Its high gain and low saturation voltage further enhance its suitability for various electronic applications

Key Features

Wide operating temperature range
Excellent thermal stability
Suitable for high-reliability applications
Military grade with rugged quality

Application

High-speed data processing
Specialized medical equipment
Automated industrial processes

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	400 mV
Maximum DC Collector Current	600 mA	Pd - Power Dissipation	500 mW
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Technology	Si
Unit Weight	0.081218 oz