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See Technical Specifications

JANTX2N3019 +BOM

Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Box

Manufacturer:

MICROCHIP
Mfr.Part #:

JANTX2N3019
Datasheet:

JANTX2N3019 Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for JANTX2N3019

Email: [email protected]

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Tel: +852 95804164

JANTX2N3019 General Description

Featuring a maximum collector-base voltage (Vcbo) of 85V and a maximum collector-emitter voltage (Vceo) of 40V, the JANTX2N3019 offers robust protection and flexibility in design. Its maximum power dissipation of 1.5W ensures efficient operation even under demanding conditions. Moreover, with a gain-bandwidth product of 800MHz, this transistor delivers exceptional frequency response and amplification capabilities for a wide range of applications

Application

SWITCHING

Specifications

Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	18 Weeks	Collector Current-Max (IC)	1 A
Collector-Emitter Voltage-Max	80 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	15	JEDEC-95 Code	TO-5
JESD-30 Code	O-MBCY-W3	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	200 °C	Polarity/Channel Type	NPN
Power Dissipation-Max (Abs)	0.8 W	Qualification Status	Qualified
Reference Standard	MIL-19500/391	Surface Mount	NO
Terminal Finish	TIN LEAD	Terminal Form	WIRE
Terminal Position	BOTTOM	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	100 MHz