This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

K4B1G1646G-BCH9 +BOM

High-density DRAM module with 1 gigabit capacity

Manufacturer:

SAMSUNG
Mfr.Part #:

K4B1G1646G-BCH9
Datasheet:

K4B1G1646G-BCH9 Datasheet (PDF)
ECCN (US):

EAR99
Automotive:

No
PPAP:

No
DRAM Type:

DDR3 SDRAM
EDA/CAD Models:

Request Free CAD Models for K4B1G1646G-BCH9

Avaq Semiconductor offers the highly versatile and reliable K4B1G1646G-BCH9 driver, produced by SAMSUNG. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the K4B1G1646G-BCH9.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
Automotive	No	PPAP	No
DRAM Type	DDR3 SDRAM	Chip Density (bit)	1G
Organization	64Mx16	Number of Internal Banks	8
Number of Words per Bank	8M	Number of Bits/Word (bit)	16
Data Bus Width (bit)	16	Maximum Clock Rate (MHz)	1333
Maximum Access Time (ns)	0.255	Address Bus Width (bit)	16
Interface Type	SSTL_1.5	Minimum Operating Supply Voltage (V)	1.425
Typical Operating Supply Voltage (V)	1.5	Maximum Operating Supply Voltage (V)	1.575
Operating Current (mA)	120	Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	95	Number of I/O Lines (bit)	16
Mounting	Surface Mount	PCB changed	96
Pin Count	96	Lead Shape	Ball