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See Technical Specifications

K4T1G084QG-BCE7 +BOM

Manufacturer:

SAMSUNG
Mfr.Part #:

K4T1G084QG-BCE7
Datasheet:

K4T1G084QG-BCE7 Datasheet (PDF)
Package/Case:

FBGA60
Product Type:

Memory ICs
EDA/CAD Models:

Request Free CAD Models for K4T1G084QG-BCE7

Key Features

JEDEC standard 1.8V0.1V Power Supply

VDDQ = 1.8V0.1V

333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin

8 Banks

Posted CAS

Programmable CAS Latency: 3, 4, 5, 6

Programmable Additive Latency: 0, 1, 2, 3, 4, 5

Write Latency(WL) = Read Latency(RL) -1

Burst Length: 4 , 8(Interleave/nibble sequential)

Programmable Sequential / Interleave Burst Mode

Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)

Off-Chip Driver(OCD) Impedance Adjustment

On Die Termination

Special Function Support

- PASR(Partial Array Self Refresh)

- 50ohm ODT

- High Temperature Self-Refresh rate enable

Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95 C

All of Lead-free products are compliant for RoHS

Application

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.