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K4B2G0846D-HYK0 +BOM

Reliable and versatile memory solution suitable for various electronic devices"

Key Features

  • JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
  • VDDQ = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
  • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin
  • 8 Banks
  • Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11
  • Programmable Additive Latency: 0, CL-2 or CL-1 clock
  • Programmable CAS Write Latency (CWL) = 5(DDR3-800), 6(DDR3-1066), 7(DDR3-1333) and 8(DDR3-1600)
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
  • Bi-directional Differential Data-Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C
  • Asynchronous Reset

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.36
Access Time-Max 0.225 ns Clock Frequency-Max (fCLK) 800 MHz
I/O Type COMMON Interleaved Burst Length 8
JESD-30 Code R-PBGA-B78 Memory Density 2147483648 bit
Memory IC Type DDR3L DRAM Memory Width 8
Number of Terminals 78 Number of Words 268435456 words
Number of Words Code 256000000 Operating Temperature-Max 85 °C
Operating Temperature-Min Organization 256MX8
Output Characteristics 3-STATE Power Supplies 1.35 V
Qualification Status Not Qualified Refresh Cycles 8192
Sequential Burst Length 8 Standby Current-Max 0.01 A
Supply Current-Max 0.125 mA Supply Voltage-Nom (Vsup) 1.35 V
Surface Mount YES Technology CMOS
Temperature Grade OTHER Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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