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See Technical Specifications

K4B4G1646D-BCK0 +BOM

DDR3 SDRAM 4Gbit 256Mx16

Manufacturer:

Samsung Electronics
Mfr.Part #:

K4B4G1646D-BCK0
Datasheet:

K4B4G1646D-BCK0 Datasheet (PDF)
ECCN (US):

EAR99
HTS:

COMPONENTS
Automotive:

No
PPAP:

No
EDA/CAD Models:

Request Free CAD Models for K4B4G1646D-BCK0

K4B4G1646D-BCK0 General Description

Elevate your system's memory performance with the Samsung K4B4G1646D-BCK0 DDR4 SDRAM chip. Running at an impressive speed of 2400 MHz and boasting a capacity of 4 gigabits, this memory module provides the reliable and high-speed memory access required for seamless computing operations. Whether you're a professional user seeking robust memory capabilities for resource-heavy tasks or a casual user looking for smoother multitasking, the K4B4G1646D-BCK0 is designed to deliver exceptional performance. Trust in Samsung's renowned semiconductor expertise to enhance your system's memory capabilities and optimize your computing experience

Key Features

Low-power SDRAM memory chip
Compact BGA packaging design
RoHS-compliant for environmental safety

Application

Navigation systems
Audio equipment
Display monitors

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
HTS	COMPONENTS	Automotive	No
PPAP	No	DRAM Type	DDR3 SDRAM
Chip Density (bit)	4G	Organization	256Mx16
Number of Internal Banks	8	Number of Words per Bank	32M
Number of Bits/Word (bit)	16	Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	1600	Maximum Access Time (ns)	0.225
Address Bus Width (bit)	18	Interface Type	SSTL_1.5
Minimum Operating Supply Voltage (V)	1.425	Maximum Operating Supply Voltage (V)	1.575
Operating Current (mA)	118	Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	95	Supplier Temperature Grade	Commercial
Number of I/O Lines (bit)	16	Mounting	Surface Mount
PCB changed	90	Pin Count	90
Lead Shape	Ball