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K4B4G1646E-BYK000 +BOM

GB Parallel Memory IC for data-intensive systems

  • Manufacturer:

    Samsung Semiconductor, Inc.

  • Mfr.Part #:

    K4B4G1646E-BYK000

  • Datasheet:

    K4B4G1646E-BYK000 Datasheet (PDF) pdf-icon

  • Programmabe:

    Not Verified

  • Memory Type:

    Volatile

  • Memory Format:

    DRAM

  • Memory Size:

    4Gbit

K4B4G1646E-BYK000 General Description

Memory IC 4Gbit Parallel 800 MHz

Specifications

Series - Programmabe Not Verified
Memory Type Volatile Memory Format DRAM
Memory Size 4Gbit Memory Organization 256M x 16
Memory Interface Parallel Clock Frequency 800 MHz
Voltage - Supply 1.35V Operating Temperature 0°C ~ 95°C
Mounting Type Surface Mount

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