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1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
TQFP100Manufacturer:
SAMSUNG SEMICONDUCTOR INC
Mfr.Part #:
K4D263238M-QC50
Datasheet:
Part Life Cycle Code:
Obsolete
Pin Count:
100
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Models:
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Part Life Cycle Code | Obsolete | Pin Count | 100 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8542.32.00.02 | Access Mode | FOUR BANK PAGE BURST |
Access Time-Max | 0.7 ns | Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 200 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PQFP-G100 |
JESD-609 Code | e0 | Length | 20 mm |
Memory Density | 134217728 bit | Memory IC Type | DDR1 DRAM |
Memory Width | 32 | Number of Functions | 1 |
Number of Ports | 1 | Number of Terminals | 100 |
Number of Words | 4194304 words | Number of Words Code | 4000000 |
Operating Mode | SYNCHRONOUS | Operating Temperature-Max | 65 °C |
Operating Temperature-Min | Organization | 4MX32 | |
Output Characteristics | 3-STATE | Power Supplies | 2.5 V |
Qualification Status | Not Qualified | Refresh Cycles | 4096 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 2,4,8,FP | Standby Current-Max | 0.08 A |
Supply Current-Max | 0.55 mA | Supply Voltage-Max (Vsup) | 2.625 V |
Supply Voltage-Min (Vsup) | 2.375 V | Supply Voltage-Nom (Vsup) | 2.5 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | COMMERCIAL | Terminal Finish | TIN LEAD |
Terminal Form | GULL WING | Terminal Pitch | 0.65 mm |
Terminal Position | QUAD | Width | 14 mm |
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