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See Technical Specifications

K4H511638D-UCB3 +BOM

High-performance DDR DRAM suitable for various applications

Manufacturer:

Samsung Semiconductor
Mfr.Part #:

K4H511638D-UCB3
Datasheet:

K4H511638D-UCB3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.28

K4H511638D-UCB3 General Description

The Samsung K4H511638D-UCB3 DDR2 SDRAM module is a reliable and high-performance memory solution designed for desktop computers. With a capacity of 512MB and a clock speed of 333MHz, this module is perfect for handling multitasking, gaming, and other resource-intensive applications. Its compatibility with systems that support DDR2 SDRAM memory makes it a versatile and convenient option for users looking to enhance their system's capabilities without any hassle

Key Features

Simplified installation
Easy configuration
Fully compatible
Long lifespan

Application

Stay ahead of the curve
Enable future innovation
Optimize performance

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
ECCN Code	EAR99	HTS Code	8542.32.00.28
Access Time-Max	0.7 ns	Clock Frequency-Max (fCLK)	166 MHz
I/O Type	COMMON	Interleaved Burst Length	2,4,8
JESD-30 Code	R-PDSO-G66	JESD-609 Code	e6
Memory Density	536870912 bit	Memory IC Type	DDR1 DRAM
Memory Width	16	Moisture Sensitivity Level	2
Number of Terminals	66	Number of Words	33554432 words
Number of Words Code	32000000	Operating Temperature-Max	70 °C
Organization	32MX16	Output Characteristics	3-STATE
Peak Reflow Temperature (Cel)	260	Power Supplies	2.5 V
Qualification Status	Not Qualified	Refresh Cycles	8192
Sequential Burst Length	2,4,8	Standby Current-Max	0.005 A
Supply Current-Max	0.38 mA	Supply Voltage-Nom (Vsup)	2.5 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	COMMERCIAL	Terminal Finish	TIN BISMUTH
Terminal Form	GULL WING	Terminal Pitch	0.635 mm
Terminal Position	DUAL