This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

K4H561638H-UCB3 +BOM

CMOS DDR DRAM 16MX16 0.7ns PDSO66

Manufacturer:

Samsung
Mfr.Part #:

K4H561638H-UCB3
Datasheet:

K4H561638H-UCB3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.24
EDA/CAD Models:

Request Free CAD Models for K4H561638H-UCB3

K4H561638H-UCB3 General Description

This SDRAM module, K4H561638H-UCB3 from Samsung, boasts an impressive capacity of 512 megabytes (MB) and a unique organization of 4 banks of 4 megabit (Mbit) x 16 bits. Operating at a voltage of 2.5 volts (V), it supports lightning-fast data transfer rates up to 166 megatransfers per second (MT/s). This high-performance module leverages its DDR interface to transmit data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to traditional SDRAM

Key Features

High-performance computing capability
Efficient data processing speeds
Robust system compatibility

Application

Mobile phones
Tablets
Internet of Things (IoT) devices
Wearable technology
Smart home devices
Automotive electronics
Digital cameras
Industrial applications
Medical devices
Military and aerospace systems

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
ECCN Code	EAR99	HTS Code	8542.32.00.24
Access Time-Max	0.7 ns	Clock Frequency-Max (fCLK)	166 MHz
I/O Type	COMMON	Interleaved Burst Length	2,4,8
JESD-30 Code	R-PDSO-G66	JESD-609 Code	e6
Memory Density	268435456 bit	Memory IC Type	DDR1 DRAM
Memory Width	16	Moisture Sensitivity Level	3
Number of Terminals	66	Number of Words	16777216 words
Number of Words Code	16000000	Operating Temperature-Max	70 °C
Organization	16MX16	Output Characteristics	3-STATE
Peak Reflow Temperature (Cel)	260	Power Supplies	2.3 V
Qualification Status	Not Qualified	Refresh Cycles	8192
Sequential Burst Length	2,4,8	Standby Current-Max	0.003 A
Supply Current-Max	0.33 mA	Supply Voltage-Nom (Vsup)	2.3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	COMMERCIAL	Terminal Finish	TIN BISMUTH
Terminal Form	GULL WING	Terminal Pitch	0.635 mm
Terminal Position	DUAL