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See Technical Specifications

K4H561638J-LCB3 +BOM

Fast memory solution for high-performance applicatio

Manufacturer:

Samsung Semiconductor
Mfr.Part #:

K4H561638J-LCB3
Datasheet:

K4H561638J-LCB3 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.24

K4H561638J-LCB3 General Description

When it comes to enhancing the performance of your electronic devices, the K4H561638J-LCB3 memory chip is a top choice. Its high level of reliability and durability ensures that your system runs smoothly without any hiccups. With fast data transfer speeds and seamless compatibility, this memory chip is a must-have for anyone looking to elevate their computing experience

Key Features

Package: 56-TFBGA
Voltage: 1.65V – 1.95V
Low power consumption

Application

Smart technology solutions
High-performance systems
Automation and control

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.24
Access Time-Max	0.7 ns	Clock Frequency-Max (fCLK)	166 MHz
I/O Type	COMMON	Interleaved Burst Length	2,4,8
JESD-30 Code	R-PDSO-G66	JESD-609 Code	e3
Memory Density	268435456 bit	Memory IC Type	DDR1 DRAM
Memory Width	16	Number of Terminals	66
Number of Words	16777216 words	Number of Words Code	16000000
Operating Temperature-Max	70 °C	Organization	16MX16
Output Characteristics	3-STATE	Qualification Status	Not Qualified
Refresh Cycles	8192	Sequential Burst Length	2,4,8
Standby Current-Max	0.003 A	Supply Current-Max	0.27 mA
Supply Voltage-Nom (Vsup)	2.5 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	COMMERCIAL
Terminal Finish	Tin (Sn)	Terminal Form	GULL WING
Terminal Pitch	0.635 mm	Terminal Position	DUAL