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RoHS compliant synchronous DRAM with 0.80mm pitch
Manufacturer:
Samsung Semiconductor
Mfr.Part #:
K4S281632K-UI75
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Obsolete
ECCN Code:
EAR99
HTS Code:
8542.32.00.02
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In the world of high-performance computing and networking, the K4S281632K-UI75 stands out as a top contender. Its high-speed operation, large capacity, and efficient organization make it an indispensable component for any system that demands speed and reliability. Whether you're building a supercomputer or designing a network infrastructure, this chip will provide the power and performance you need to stay ahead of the curve
Pbfree Code | Yes | Part Life Cycle Code | Obsolete |
ECCN Code | EAR99 | HTS Code | 8542.32.00.02 |
Access Mode | FOUR BANK PAGE BURST | Access Time-Max | 5.4 ns |
Additional Feature | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 133 MHz |
I/O Type | COMMON | Interleaved Burst Length | 1,2,4,8 |
JESD-30 Code | R-PDSO-G54 | Length | 22.22 mm |
Memory Density | 134217728 bit | Memory IC Type | SYNCHRONOUS DRAM |
Memory Width | 16 | Moisture Sensitivity Level | 3 |
Number of Functions | 1 | Number of Ports | 1 |
Number of Terminals | 54 | Number of Words | 8388608 words |
Number of Words Code | 8000000 | Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
Organization | 8MX16 | Output Characteristics | 3-STATE |
Peak Reflow Temperature (Cel) | 260 | Qualification Status | Not Qualified |
Refresh Cycles | 4096 | Seated Height-Max | 1.2 mm |
Self Refresh | YES | Sequential Burst Length | 1,2,4,8,FP |
Standby Current-Max | 0.002 A | Supply Current-Max | 0.2 mA |
Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 3 V |
Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | INDUSTRIAL |
Terminal Form | GULL WING | Terminal Pitch | 0.8 mm |
Terminal Position | DUAL | Width | 10.16 mm |
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