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54 Pin TSOP Plastic, SDRAM 4M x 16
Manufacturer:
Samsung Semiconductor
Mfr.Part #:
K4S641632H-TC75
Datasheet:
Part Life Cycle Code:
Obsolete
Pin Count:
54
ECCN Code:
EAR99
HTS Code:
8542.32.00.02
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In line with current environmental standards, the K4S641632H-TC75 comes in a TSOPII package with a lead-free finish, making it eco-friendly and compliant with RoHS regulations. This not only aligns with sustainability goals but also ensures the chip meets global industry standards for electronic components. With its reliable performance and advanced features, the K4S641632H-TC75 is a versatile memory solution that can elevate the performance of various electronic devices
Part Life Cycle Code | Obsolete | Pin Count | 54 |
ECCN Code | EAR99 | HTS Code | 8542.32.00.02 |
Access Mode | FOUR BANK PAGE BURST | Access Time-Max | 5.4 ns |
Additional Feature | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 133 MHz |
I/O Type | COMMON | Interleaved Burst Length | 1,2,4,8 |
JESD-30 Code | R-PDSO-G54 | Length | 22.22 mm |
Memory Density | 67108864 bit | Memory IC Type | SYNCHRONOUS DRAM |
Memory Width | 16 | Moisture Sensitivity Level | 3 |
Number of Functions | 1 | Number of Ports | 1 |
Number of Terminals | 54 | Number of Words | 4194304 words |
Number of Words Code | 4000000 | Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 70 °C | Organization | 4MX16 |
Output Characteristics | 3-STATE | Power Supplies | 3.3 V |
Qualification Status | Not Qualified | Refresh Cycles | 4096 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 1,2,4,8,FP | Standby Current-Max | 0.001 A |
Supply Current-Max | 0.135 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | COMMERCIAL | Terminal Form | GULL WING |
Terminal Pitch | 0.8 mm | Terminal Position | DUAL |
Width | 10.16 mm |
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